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High Impact Research: Composition metrology and correlative microscopy of wide bandgap semiconductors with APT
In the last decade, atom probe tomography (APT) has emerged as a valuable tool in the study of III-N semiconductors. In optoelectronics, it has provided insights into the nanostructure of light emitting diodes (LEDs), laser diodes and microwires. In nano-electronics, it has allowed insights into doping and alloying effects in transistors.

Coupled with other microscopy techniques (i.e., TEM, PL, CL) and theoretical modeling, the availability of three-dimensional compositional information of nitride heterostructures based on the APT data has had (and will continue to have) a profound impact on the design and development of devices.

Feb 1, 2022 08:00 AM in Pacific Time (US and Canada)

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